According to foreign media reports, the US-based Solar-Tectic company, with the assistance of Binghamton University and Blue Wave Semiconductor, has patented a new thin film transistor (TFT) technology, which will help improve organic light-emitting diodes.
The efficiency of (OLED), active matrix OLED (AMOLEDs), liquid crystal device (LCD) displays, and solar cell devices reduces their cost.
Unlike traditional low temperature polysilicon (LTPS) processes used to fabricate TFTs that drive display pixels and require expensive excimer laser annealing, this new process is derived from metal induced crystallization (MIC) and uses a modified liquid phase.
An epitaxial electron beam process capable of depositing a thin metal layer on a metal oxide such as a magnesium oxide buffer substrate at a temperature as low as 232 ° C, then depositing a final vaporized silicon (Si) layer and crystallizing to a thickness of about 50 to 100 nm
The film does not have any metal residue throughout the process.
Analysis of the Si film by using Raman spectroscopy and X-ray spectroscopy showed an electron mobility of up to 188 cm 2 /Vs (compared to 100 cm 2 /Vs for conventional LTPS electron migration).
Researchers hope to further increase crystal size by using ST and BWS oriented MgO (111) thin film buffer substrates, thereby further increasing electron mobility, ultimately improving equipment efficiency and reducing costs.